Manufacturer Part Number
NST857BDP6T5G
Manufacturer
onsemi
Introduction
High-performance dual PNP bipolar junction transistor (BJT) array in a compact SOT-963 package.
Product Features and Performance
Dual PNP BJT configuration
High frequency operation up to 100 MHz
Low collector-emitter saturation voltage of 700 mV @ 5 mA, 100 mA
Collector-emitter breakdown voltage of 45 V
Collector current up to 100 mA
Collector cutoff current of only 15 nA
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact SOT-963 package for space-saving designs
Excellent high-frequency performance
Low saturation voltage for efficient operation
High breakdown voltage for reliability
Wide temperature range for diverse applications
Key Technical Parameters
Package: SOT-963
Operating Temperature: -55°C to 150°C
Power Dissipation: 350 mW
Collector-Emitter Breakdown Voltage: 45 V
Collector Current: 100 mA
Collector Cutoff Current: 15 nA
DC Current Gain (hFE): Minimum 220 @ 2 mA, 5 V
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable and durable performance
Compatibility
The NST857BDP6T5G is compatible with a wide range of electronic circuit designs and applications that require high-performance dual PNP bipolar junction transistors.
Application Areas
Analog and digital circuits
Amplifiers and switches
High-frequency signal processing
Power management systems
Industrial control and automation
Product Lifecycle
The NST857BDP6T5G is an active product, and there are no immediate plans for discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Exceptional high-frequency performance up to 100 MHz
Low saturation voltage for efficient operation
High breakdown voltage for reliable performance
Wide temperature range for diverse applications
Compact SOT-963 package for space-saving designs
RoHS3 compliance for environmental responsibility
Proven reliability and durability from onsemi