Manufacturer Part Number
MJE15031
Manufacturer
onsemi
Introduction
The MJE15031 is a high-power PNP bipolar junction transistor (BJT) from onsemi. It is designed for use in a variety of power switching and amplification applications.
Product Features and Performance
High power handling capability up to 50W
High collector-emitter breakdown voltage of 150V
High collector current rating of up to 8A
High current gain (hFE) of at least 20 at 4A collector current
High frequency transition (fT) of 30MHz
Wide operating temperature range of -65°C to 150°C
Product Advantages
Robust and reliable performance
Suitable for high-power, high-voltage applications
Excellent thermal stability
Versatile and can be used in various power electronics circuits
Key Technical Parameters
Manufacturer Part Number: MJE15031
Package: TO-220-3
Power Rating: 50W
Collector-Emitter Breakdown Voltage: 150V
Collector Current: 8A
Collector Cutoff Current: 100μA
Vce Saturation Voltage: 500mV @ 100mA, 1A
Current Gain (hFE): 20 minimum @ 4A, 2V
Transition Frequency (fT): 30MHz
Quality and Safety Features
RoHS non-compliant
Designed and manufactured to onsemi's high-quality standards
Compatibility
Can be used as a direct replacement for other PNP bipolar transistors in similar package and performance requirements
Application Areas
Power amplifiers
Power supplies
Motor controls
Industrial equipment
Automotive electronics
Product Lifecycle
The MJE15031 is an established and widely used product, and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi or other semiconductor manufacturers.
Several Key Reasons to Choose This Product
Robust and reliable performance in high-power, high-voltage applications
Wide operating temperature range and thermal stability
High current handling capability
Excellent frequency response for high-speed switching applications
Compatibility with a variety of power electronics circuits
Availability and ongoing support from a reputable semiconductor manufacturer, onsemi.