Manufacturer Part Number
MJE15031
Manufacturer
NTE Electronics, Inc.
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
TO-220 package
Wide operating temperature range of -65°C to 150°C
High power handling capability of up to 50 watts
High collector-emitter breakdown voltage of 150 volts
High collector current capability of up to 8 amps
High collector cutoff current of up to 100 amps
Low collector-emitter saturation voltage of 500mV @ 100mA, 1A
Moderate DC current gain of 20 @ 4A, 2V
High transition frequency of 30MHz
Product Advantages
Robust and reliable performance
Suitable for high-power, high-voltage applications
Compact and easy to mount in through-hole designs
Key Technical Parameters
Package: TO-220-3
RoHS: Non-compliant
Collector-Emitter Breakdown Voltage (Max): 150V
Collector Current (Max): 8A
Collector Cutoff Current (Max): 100A
Collector-Emitter Saturation Voltage: 500mV @ 100mA, 1A
DC Current Gain (Min): 20 @ 4A, 2V
Transition Frequency: 30MHz
Quality and Safety Features
Designed and manufactured to meet industry quality and safety standards
Compatibility
Widely compatible with various electronic circuit designs and applications
Application Areas
Suitable for use in high-power, high-voltage electronic circuits and devices
Product Lifecycle
This product is an active and available part from the manufacturer
Key Reasons to Choose
Robust and reliable performance
Suitable for high-power, high-voltage applications
Compact and easy to mount design
Meets industry quality and safety standards
Widely compatible with various electronic applications
MJE1320ONsemi