Manufacturer Part Number
MJE15028G
Manufacturer
onsemi
Introduction
High power NPN bipolar junction transistor
Product Features and Performance
High power handling capability up to 50W
Collector-emitter breakdown voltage up to 120V
Collector current up to 8A
High collector current cutoff up to 100A
Low collector-emitter saturation voltage
Wide operating temperature range of -65°C to 150°C
Product Advantages
Suitable for high power switching and amplifier applications
Reliable performance in harsh environments
Efficient power conversion and control
Key Technical Parameters
Power Dissipation: 50W
Collector-Emitter Breakdown Voltage: 120V
Collector Current: 8A
Collector Cutoff Current: 100A
Collector-Emitter Saturation Voltage: 500mV
DC Current Gain: 20 minimum
Transition Frequency: 30MHz
Quality and Safety Features
RoHS3 compliant
TO-220 package for reliable thermal management
Compatibility
Through-hole mounting
Application Areas
High power switching circuits
Power amplifiers
Motor control
Industrial automation
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
High power handling capability
Wide operating voltage and current range
Excellent thermal management in TO-220 package
Reliable performance in harsh environments
Suitable for a variety of high power applications