Manufacturer Part Number
MJE15029G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
High Power Handling Capacity: 50W
High Voltage Rating: 120V Collector-Emitter Breakdown Voltage
High Current Capability: 8A Collector Current, 100A Collector Cutoff Current
Low Saturation Voltage: 500mV @ 100mA/1A
High DC Current Gain: 20 @ 4A/2V
High Frequency Response: 30MHz Transition Frequency
Product Advantages
Robust and Reliable Performance
Efficient Power Handling
Suitable for High-Power Applications
Key Technical Parameters
Operating Temperature Range: -65°C to 150°C
Package: TO-220-3
Quality and Safety Features
RoHS3 Compliant
Compatibility
Through-Hole Mounting
Application Areas
Power Amplifiers
Switching Power Supplies
Motor Control Circuits
Industrial Electronics
Product Lifecycle
Active product
Replacement/upgrade options available
Key Reasons to Choose This Product
Excellent Power Handling Capability
High Voltage and Current Ratings
Low Saturation Voltage for Efficient Operation
High DC Current Gain for Improved Performance
Suitable for a Wide Range of High-Power Applications