Manufacturer Part Number
MJE15028
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
Power Rating: 50 W
Collector-Emitter Breakdown Voltage: 120 V
Collector Current (Max): 8 A
Collector Cutoff Current (Max): 100 A
Saturation Voltage (Vce Sat): 500 mV @ 100 mA, 1 A
Current Gain (hFE): 20 min. @ 4 A, 2 V
Transition Frequency: 30 MHz
Product Advantages
Reliable high-power performance
Suitable for a wide range of applications
Key Technical Parameters
RoHS non-compliant
Package: TO-220-3
Operating Temperature: -65°C to 150°C
Quality and Safety Features
Meets industrial safety and quality standards
Compatibility
Through-hole mounting
Application Areas
Power amplifiers
Switching circuits
Inverters
Motor control
Product Lifecycle
Mature product, no discontinuation plans
Key Reasons to Choose
Robust high-power handling
Proven reliability
Versatile application suitability
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