Manufacturer Part Number
MJE15032G
Manufacturer
onsemi
Introduction
The MJE15032G is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) in the NPN configuration.
Product Features and Performance
High power handling capability of up to 50 W
High collector-emitter breakdown voltage of 250 V
High collector current rating of up to 8 A
Wide operating temperature range of -65°C to 150°C
High DC current gain (hFE) of at least 10 at 2 A and 5 V
High transition frequency of 30 MHz
Product Advantages
Robust and reliable performance
Suitable for high-power and high-voltage applications
Excellent thermal stability and wide temperature range
Key Technical Parameters
Power Rating: 50 W
Collector-Emitter Breakdown Voltage: 250 V
Collector Current (Max): 8 A
Collector Cutoff Current (Max): 10 A
Saturation Voltage (Vce Sat): 500 mV @ 100 mA, 1 A
DC Current Gain (hFE): 10 min @ 2 A, 5 V
Transition Frequency: 30 MHz
Quality and Safety Features
RoHS3 compliant
Manufactured in a quality-controlled environment
Compatibility
Through-hole mounting in a TO-220 package
Application Areas
Suitable for high-power and high-voltage circuits
Suitable for use in power supplies, motor drives, and industrial control applications
Product Lifecycle
This product is currently in production and available.
No immediate plans for discontinuation or replacement.
Several Key Reasons to Choose This Product
Robust and reliable performance in high-power and high-voltage applications
Wide operating temperature range for versatile use
Excellent thermal stability and high power handling capability
High DC current gain and transition frequency for efficient operation
RoHS3 compliance for environmental responsibility
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