Manufacturer Part Number
MJE15034
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
TO-220 package
Power rating: 2W
Collector-Emitter Breakdown Voltage: 350V
Collector Current (Max): 4A
Collector Cutoff Current (Max): 10A
Collector-Emitter Saturation Voltage: 500mV @ 100mA, 1A
DC Current Gain (hFE): Min. 10 @ 2A, 5V
Transition Frequency: 30MHz
Operating Temperature Range: -65°C to 150°C
Product Advantages
High power handling capability
High breakdown voltage
Suitable for high current applications
Key Technical Parameters
Package: TO-220-3
Transistor Type: NPN
Mounting Type: Through Hole
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for a variety of high-power, high-voltage electronic applications
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Mature product, no discontinuation or replacement plans known at this time
Several Key Reasons to Choose This Product
High power and voltage handling capability
Robust TO-220 package
Good DC current gain and transition frequency
Suitable for a wide range of high-power electronic applications