Manufacturer Part Number
MJE15034G
Manufacturer
onsemi
Introduction
High-voltage, high-current NPN silicon power transistor
Product Features and Performance
Designed for use in power amplifiers, voltage regulators, and other high-power applications
Capable of handling high voltages up to 350V and high currents up to 4A
Offers high current gain (hFE) of at least 10 at 2A and 5V
Operates at high frequencies up to 30MHz
Product Advantages
Robust and reliable performance
Suitable for a wide range of high-power applications
Efficient heat dissipation with TO-220 package
Key Technical Parameters
Power Rating: 2W
Collector-Emitter Breakdown Voltage (VCEO): 350V
Collector Current (IC): 4A
Collector Cutoff Current (ICBO): 10A
Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 100mA, 1A
Quality and Safety Features
Compliant with RoHS3 environmental standards
Reliable and durable construction
Compatibility
Through-hole mounting for easy integration into various circuit designs
Application Areas
Power amplifiers
Voltage regulators
Other high-power electronic applications
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Capable of handling high voltages and currents
Offers high current gain and high-frequency performance
Robust and reliable construction for long-lasting operation
Suitable for a wide range of high-power applications
Efficient heat dissipation with the TO-220 package