Manufacturer Part Number
MJE170STU
Manufacturer
onsemi
Introduction
This is a PNP bipolar junction transistor (BJT) from onsemi, a leading manufacturer of semiconductor devices.
Product Features and Performance
Power rating of 1.5W
Collector-emitter breakdown voltage of 40V
Collector current rating of 3A
Collector cutoff current of 100nA
Saturation voltage of 1.7V @ 600mA, 3A
Current gain of 50 min. @ 100mA, 1V
Transition frequency of 50MHz
Product Advantages
Reliable and robust performance
Suitable for a wide range of power switching and amplifier applications
Compact TO-126-3 package for efficient heat dissipation
Key Technical Parameters
Manufacturer Part Number: MJE170STU
Package: TO-126-3
Operating Temperature: 150°C (TJ)
Power Rating: 1.5W
Collector-Emitter Breakdown Voltage: 40V
Collector Current: 3A
Current Gain: 50 min. @ 100mA, 1V
Transition Frequency: 50MHz
Quality and Safety Features
Manufactured to high quality standards by onsemi
Suitable for industrial and commercial applications
Compatibility
Compatible with a wide range of electronic circuits and systems that require a high-performance PNP bipolar transistor
Application Areas
Power switching circuits
Amplifier circuits
Industrial and commercial electronic equipment
Product Lifecycle
This product is an active and widely used part in onsemi's portfolio
Replacement or upgrade options may be available, but the part is not nearing discontinuation
Key Reasons to Choose This Product
Reliable and robust performance
Suitable for a wide range of power switching and amplifier applications
Compact and efficient TO-126-3 package
Manufactured by a leading semiconductor company, onsemi
Compatibility with a wide range of electronic circuits and systems