MJE15035G - onsemi

Manufacturer Part Number

MJE15035G

Manufacturer

onsemi

Introduction

The MJE15035G is a PNP bipolar junction transistor (BJT) designed for use in power applications.

Product Features and Performance

Power rating of 2W

Collector-Emitter Breakdown Voltage of 350V

Collector Current rating of 4A

Collector Cutoff Current of 10A

Low Saturation Voltage of 500mV @ 1A, 100mA

DC Current Gain (hFE) of 10 min @ 2A, 5V

Transition Frequency of 30MHz

Product Advantages

Robust power handling capabilities

High voltage operation

Low saturation voltage for efficient power switching

Wide operating temperature range of -65°C to 150°C

Key Technical Parameters

Power Rating: 2W

Collector-Emitter Breakdown Voltage: 350V

Collector Current (Max): 4A

Collector Cutoff Current (Max): 10A

Saturation Voltage (Max): 500mV @ 1A, 100mA

DC Current Gain (Min): 10 @ 2A, 5V

Transition Frequency: 30MHz

Quality and Safety Features

RoHS3 compliant

TO-220 package provides good thermal performance

Compatibility

Through-hole mounting

Compatible with standard TO-220 sockets and PCB footprints

Application Areas

Power amplifiers

Power switching circuits

Motor control

Industrial electronics

Product Lifecycle

This is an active product, with no plans for discontinuation.

Replacements and upgrades are available from onsemi.

Key Reasons to Choose This Product

Robust power handling capabilities for demanding applications

High voltage operation up to 350V

Low saturation voltage for efficient power switching

Wide operating temperature range of -65°C to 150°C

RoHS3 compliance for environmental responsibility

Through-hole mounting for easy integration into existing designs