Manufacturer Part Number
MJE15035G
Manufacturer
onsemi
Introduction
The MJE15035G is a PNP bipolar junction transistor (BJT) designed for use in power applications.
Product Features and Performance
Power rating of 2W
Collector-Emitter Breakdown Voltage of 350V
Collector Current rating of 4A
Collector Cutoff Current of 10A
Low Saturation Voltage of 500mV @ 1A, 100mA
DC Current Gain (hFE) of 10 min @ 2A, 5V
Transition Frequency of 30MHz
Product Advantages
Robust power handling capabilities
High voltage operation
Low saturation voltage for efficient power switching
Wide operating temperature range of -65°C to 150°C
Key Technical Parameters
Power Rating: 2W
Collector-Emitter Breakdown Voltage: 350V
Collector Current (Max): 4A
Collector Cutoff Current (Max): 10A
Saturation Voltage (Max): 500mV @ 1A, 100mA
DC Current Gain (Min): 10 @ 2A, 5V
Transition Frequency: 30MHz
Quality and Safety Features
RoHS3 compliant
TO-220 package provides good thermal performance
Compatibility
Through-hole mounting
Compatible with standard TO-220 sockets and PCB footprints
Application Areas
Power amplifiers
Power switching circuits
Motor control
Industrial electronics
Product Lifecycle
This is an active product, with no plans for discontinuation.
Replacements and upgrades are available from onsemi.
Key Reasons to Choose This Product
Robust power handling capabilities for demanding applications
High voltage operation up to 350V
Low saturation voltage for efficient power switching
Wide operating temperature range of -65°C to 150°C
RoHS3 compliance for environmental responsibility
Through-hole mounting for easy integration into existing designs
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