Manufacturer Part Number
MJE15035
Manufacturer
onsemi
Introduction
The MJE15035 is a high-power PNP bipolar junction transistor (BJT) designed for a variety of power control and switching applications.
Product Features and Performance
Capable of handling up to 2 watts of power
Breakdown voltage of 350 volts between collector and emitter
Maximum collector current of 4 amperes
High DC current gain of at least 10 at 2 amps and 5 volts
Transition frequency of 30 megahertz
Product Advantages
Robust through-hole package design
Reliable high-power performance
Suitable for a wide range of applications
Key Technical Parameters
Power Rating: 2 watts
Collector-Emitter Breakdown Voltage: 350 volts
Collector Current (Max): 4 amperes
DC Current Gain: Minimum 10 at 2 amps, 5 volts
Transition Frequency: 30 megahertz
Quality and Safety Features
RoHS non-compliant
Compatibility
Through-hole mounting
TO-220 package
Application Areas
Power control and switching circuits
Audio amplifiers
Motor control
Industrial and consumer electronics
Product Lifecycle
This is an established product, not nearing discontinuation.
Replacement and upgrade options are available.
Key Reasons to Choose This Product
Robust high-power performance
Reliable and proven technology
Suitable for a wide range of applications
Availability of compatible replacement and upgrade options