MJE15033G - onsemi

Manufacturer Part Number

MJE15033G

Manufacturer

onsemi

Introduction

High-power PNP bipolar junction transistor (BJT)

Designed for use in power amplifier, power switching, and power control applications

Product Features and Performance

High power rating of 50W

High current capability up to 8A

High voltage rating up to 250V

High current gain (hFE) of at least 10 at 2A, 5V

High transition frequency of 30MHz

Wide operating temperature range from -65°C to 150°C

Product Advantages

Robust and reliable performance

Suitable for high-power, high-current, and high-voltage applications

Versatile usage in various power electronics circuits

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 250V

Collector Current (IC): 8A

Collector-Emitter Saturation Voltage (VCE(sat)): 500mV @ 1A, 100mA

DC Current Gain (hFE): 10 @ 2A, 5V

Transition Frequency (fT): 30MHz

Power Dissipation: 50W

Operating Temperature Range: -65°C to 150°C

Quality and Safety Features

RoHS3 compliant

Housed in a reliable TO-220 package

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Power amplifiers

Power switching circuits

Power control systems

Industrial and automotive electronics

Product Lifecycle

Currently in active production

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High power and current handling capabilities

Broad voltage and temperature operating range

Robust and reliable performance

Versatile usage in various power electronics applications

RoHS3 compliance for environmental sustainability