Manufacturer Part Number
MJB45H11T4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Bipolar Junction Transistor (BJT) - Single
Product Features and Performance
Power Rating: 2W
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 10A
Collector Cutoff Current (Max): 10A
Collector-Emitter Saturation Voltage: 1V @ 400mA, 8A
DC Current Gain (hFE): 40 @ 4A, 1V
Transition Frequency: 40MHz
Product Advantages
High power handling capability
High voltage and current ratings
Low saturation voltage
Suitable for a variety of high-power applications
Key Technical Parameters
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Power amplifiers
Switching circuits
Motor controls
Industrial electronics
Product Lifecycle
Currently available, no discontinuation announced
Several Key Reasons to Choose This Product
Excellent power handling and high voltage/current ratings
Low saturation voltage for efficient operation
Suitable for a wide range of high-power applications
Reliable performance within the operating temperature range
RoHS3 compliance for environmental responsibility