Manufacturer Part Number
MJB45H11
Manufacturer
onsemi
Introduction
High power PNP bipolar junction transistor (BJT)
Product Features and Performance
Optimized for high-current, high-power switching and amplification applications
Capable of handling up to 10A collector current
Operates at voltages up to 80V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Robust design for high reliability
Efficient power handling capabilities
Suitable for various high-power electronic applications
Key Technical Parameters
Power Rating: 2W
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 10A
DC Current Gain (hFE): Minimum 40 @ 4A, 1V
Transition Frequency: 40MHz
Quality and Safety Features
RoHS non-compliant
Compatibility
Surface mount DPAK package
Application Areas
High-power switching and amplification circuits
Industrial and automotive electronics
Power supplies and converters
Motor control systems
Product Lifecycle
This product is an established part of onsemi's portfolio and is not nearing discontinuation.
Replacement or upgraded parts are available if needed.
Key Reasons to Choose This Product
Robust and reliable high-power performance
Efficient power handling capabilities
Wide operating temperature range
Suitable for various high-power electronic applications
Established part with available replacement options