Manufacturer Part Number
MJB44H11T4G
Manufacturer
onsemi
Introduction
High voltage, high current NPN silicon transistor in a DPAK package
Product Features and Performance
Rated for up to 80V collector-emitter voltage
Rated for up to 10A collector current
Transition frequency of 50MHz
High current gain of at least 40 at 4A collector current
Low saturation voltage of 1V at 8A collector current
Product Advantages
Compact DPAK surface mount package
Suitable for high power switching and amplifier applications
Reliable performance in high temperature environments up to 150°C
Key Technical Parameters
Collector-Emitter Voltage (BVCEO): 80V
Collector Current (IC): 10A
Power Dissipation (Pd): 2W
Junction Temperature (TJ): -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Supplied in tape and reel packaging
Compatibility
Suitable for surface mount assembly
Application Areas
High power switching circuits
Power amplifiers
Motor drives
Industrial power electronics
Product Lifecycle
This is an active and available product from onsemi
No plans for discontinuation, with ongoing product support and availability
Key Reasons to Choose
High voltage and high current capability
Compact surface mount DPAK package
Reliable performance at high temperatures
Cost-effective solution for high power applications