MJB44H11T4 - STMicroelectronics

Manufacturer Part Number

MJB44H11T4

Manufacturer

STMicroelectronics

Introduction

High-performance NPN power transistor in a DPAK package, suitable for various power conversion and control applications.

Product Features and Performance

High current capability up to 10A

High voltage rating up to 80V

Low saturation voltage (Vce(sat)) of 1V at 8A

High DC current gain (hFE) of 40 min at 4A, 1V

Excellent thermal performance with 150°C maximum junction temperature

Product Advantages

Compact DPAK surface-mount package

High power density and efficiency

Reliable and robust design for demanding applications

Suitable for various power conversion and control circuits

Key Technical Parameters

Power rating: 50W

Collector-Emitter Breakdown Voltage (BVCE0): 80V

Collector Current (IC): 10A

Collector-Emitter Saturation Voltage (VCE(sat)): 1V @ 400mA, 8A

DC Current Gain (hFE): 40 min @ 4A, 1V

Quality and Safety Features

RoHS3 compliant

Reliable performance and long lifespan

Stringent quality control and testing

Compatibility

Suitable for a wide range of power conversion and control applications

Can be used as a replacement or upgrade for similar NPN power transistors

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Welding equipment

Industrial and automotive electronics

Product Lifecycle

Current production model

No plans for discontinuation

Availability of replacement or upgraded models if needed

Several Key Reasons to Choose This Product

High current and voltage capabilities for demanding applications

Excellent thermal performance and efficiency

Compact and reliable DPAK surface-mount package

Proven track record and support from a reputable manufacturer

Compatibility with a wide range of power conversion and control circuits