MJB42CT4G - onsemi

Manufacturer Part Number

MJB42CT4G

Manufacturer

onsemi

Introduction

High-performance bipolar transistor in a surface-mount package for power amplifier and switching applications.

Product Features and Performance

High-voltage capability up to 100V

High current handling up to 6A

High power dissipation up to 2W

Wide operating temperature range of -65°C to 150°C

Fast switching speed with transition frequency of 3MHz

Product Advantages

Excellent power handling and thermal management in a compact package

Reliable performance across wide temperature and voltage ranges

Suitable for high-power amplifier and switching applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 100V

Collector Current (Max): 6A

Collector Cutoff Current (Max): 700mA

Collector-Emitter Saturation Voltage (Max): 1.5V @ 600mA, 6A

DC Current Gain (Min): 15 @ 3A, 4V

Transition Frequency: 3MHz

Quality and Safety Features

RoHS3 compliant

Housed in a DPAK surface-mount package for reliable performance

Compatibility

Suitable for a wide range of power amplifier and switching applications

Application Areas

Power amplifiers

Switching circuits

Power supplies

Motor drives

Industrial controls

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

High power handling and thermal management capabilities

Wide operating voltage and temperature ranges

Fast switching speed for efficient power conversion

Compact and reliable DPAK surface-mount package

RoHS3 compliance for environmental responsibility