Manufacturer Part Number
MJB44H11
Manufacturer
onsemi
Introduction
Bipolar Junction Transistor (BJT)
Single Transistor
Discrete Semiconductor Product
Product Features and Performance
Power Rating: 2W
Voltage Rating: 80V (Collector-Emitter Breakdown Voltage)
Current Rating: 10A (Collector Current)
DC Current Gain (hFE): Minimum 40 @ 4A, 1V
Transition Frequency: 50MHz
Operating Temperature Range: -55°C to 150°C
Product Advantages
High power and current handling capability
Suitable for high-frequency applications
Robust design for harsh operating environments
Key Technical Parameters
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Transistor Type: NPN
Vce Saturation (Max): 1V @ 400mA, 8A
Collector Cutoff Current (Max): 10A
Quality and Safety Features
RoHS non-compliant
Compatibility
Surface mount package suitable for automated assembly
Application Areas
Power amplifiers
Motor drives
Switching circuits
Industrial electronics
Product Lifecycle
Mature product, no indication of discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
High power and current handling
Suitable for high-frequency applications
Robust design for harsh environments
Proven reliability and performance