MJB44H11 - onsemi

Manufacturer Part Number

MJB44H11

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT)

Single Transistor

Discrete Semiconductor Product

Product Features and Performance

Power Rating: 2W

Voltage Rating: 80V (Collector-Emitter Breakdown Voltage)

Current Rating: 10A (Collector Current)

DC Current Gain (hFE): Minimum 40 @ 4A, 1V

Transition Frequency: 50MHz

Operating Temperature Range: -55°C to 150°C

Product Advantages

High power and current handling capability

Suitable for high-frequency applications

Robust design for harsh operating environments

Key Technical Parameters

Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB

Transistor Type: NPN

Vce Saturation (Max): 1V @ 400mA, 8A

Collector Cutoff Current (Max): 10A

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface mount package suitable for automated assembly

Application Areas

Power amplifiers

Motor drives

Switching circuits

Industrial electronics

Product Lifecycle

Mature product, no indication of discontinuation

Replacements and upgrades available from onsemi

Key Reasons to Choose This Product

High power and current handling

Suitable for high-frequency applications

Robust design for harsh environments

Proven reliability and performance