MJB44H11G - onsemi

Manufacturer Part Number

MJB44H11G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Designed for high-power switching and amplifier applications

Capable of handling high voltage and high current

Excellent thermal characteristics

Suitable for a wide range of operating temperatures

Product Advantages

High power handling capability

Robust design for reliable operation

Versatile application in power electronics

Key Technical Parameters

Power Dissipation: 2 W

Collector-Emitter Breakdown Voltage: 80 V

Collector Current (Max): 10 A

DC Current Gain (hFE): 40 @ 4 A, 1 V

Transition Frequency: 50 MHz

Quality and Safety Features

RoHS 3 compliant

Packaged in DPAK (TO-263-3) surface mount package

Compatibility

Compatible with a variety of power electronic circuits and applications

Application Areas

High-power switching and amplifier circuits

Power supplies

Motor controls

Industrial and automotive electronics

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High power handling capability

Reliable and robust design

Versatile application in power electronics

Excellent thermal characteristics

RoHS 3 compliance for environmental friendliness