BC817-16LT1G - onsemi

Manufacturer Part Number

BC817-16LT1G

Manufacturer

onsemi

Introduction

The BC817-16LT1G is a general-purpose NPN bipolar junction transistor (BJT) from onsemi. It is designed for a wide range of amplifier and switching applications.

Product Features and Performance

High current gain (hFE min. 100 @ 100mA, 1V)

High cutoff frequency (fT min. 100MHz)

Low collector-emitter saturation voltage (VCE(sat) max. 700mV @ 50mA, 500mA)

Wide collector-emitter breakdown voltage (VCEO max. 45V)

Low collector cutoff current (ICBO max. 100nA)

Wide operating temperature range (-65°C to 150°C)

Low power dissipation (300mW max.)

Product Advantages

Excellent high-frequency performance

Low noise and distortion

High reliability and stability

Compact surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45V

Collector Current (IC): 500mA

Collector-Emitter Saturation Voltage (VCE(sat)): 700mV @ 50mA, 500mA

DC Current Gain (hFE): 100 min. @ 100mA, 1V

Transition Frequency (fT): 100MHz

Quality and Safety Features

RoHS3 compliant

Qualified to AEC-Q101 automotive standard

Compatibility

Suitable for a wide range of amplifier and switching applications

Can be used as a replacement for various general-purpose NPN BJTs

Application Areas

Audio amplifiers

Power supplies

Switching circuits

Relay and lamp drivers

General-purpose amplification and switching

Product Lifecycle

Currently in production

No plans for discontinuation

Upgrades and replacements may be available in the future

Several Key Reasons to Choose This Product

Excellent high-frequency performance for efficient circuit design

Low noise and distortion for high-quality signal processing

High reliability and stability for long-term, dependable operation

Compact surface-mount package for space-constrained applications

RoHS3 compliance and AEC-Q101 automotive qualification for use in a variety of applications