Manufacturer Part Number
BC817-16W
Manufacturer
Yangjie Technology
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
Low power, high gain NPN transistor
Wide operating temperature range: -55°C to 150°C
High collector current capability: up to 500 mA
High current gain: minimum hFE of 100 at 500 mA, 1 V
High transition frequency: 100 MHz
Product Advantages
Reliable and robust performance
Compact surface mount package
RoHS compliant
Key Technical Parameters
Power Max: 200 mW
Voltage Collector Emitter Breakdown (Max): 45 V
Current Collector (Ic) (Max): 500 mA
Current Collector Cutoff (Max): 100 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700 mV @ 50 mA, 500 mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500 mA, 1 V
Frequency Transition: 100 MHz
Quality and Safety Features
RoHS compliant
Reliable performance in various operating conditions
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Suitable for use in amplifiers, switches, and other electronic circuits
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
Reliable and robust performance
High current handling capability
Wide operating temperature range
Compact surface mount package
RoHS compliance