BC817-16LT3G - onsemi

Manufacturer Part Number

BC817-16LT3G

Manufacturer

onsemi

Introduction

NPN Bipolar Junction Transistor (BJT)

Small signal transistor for general-purpose applications

Product Features and Performance

Operating temperature range: -65°C to 150°C

Maximum power dissipation: 300 mW

Maximum collector-emitter breakdown voltage: 45 V

Maximum collector current: 500 mA

Minimum DC current gain (hFE): 100 @ 100 mA, 1 V

Transition frequency: 100 MHz

Product Advantages

RoHS 3 compliant

Surface mount package (SOT-23-3)

Tape and reel packaging

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45 V

Collector Current (IC): 500 mA

Collector Cutoff Current (ICBO): 100 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 700 mV @ 50 mA, 500 mA

DC Current Gain (hFE): 100 @ 100 mA, 1 V

Transition Frequency (fT): 100 MHz

Quality and Safety Features

RoHS 3 compliant

Suitable for general-purpose applications

Compatibility

Compatible with various electronic circuits and devices

Application Areas

General-purpose amplifier and switch applications

Driver circuits

Logic gates

Analog and digital circuits

Product Lifecycle

Mature product, not nearing discontinuation

Replacements and upgrades available

Key Reasons to Choose This Product

Reliable performance in a wide temperature range

High breakdown voltage and current handling capability

Good frequency response with 100 MHz transition frequency

RoHS 3 compliance for environmental responsibility

Surface mount package for ease of integration

Widely available and cost-effective solution