MJB41CT4G - onsemi

Manufacturer Part Number

MJB41CT4G

Manufacturer

onsemi

Introduction

High-voltage NPN power transistor

Product Features and Performance

Wide operating temperature range: -65°C to 150°C

High power capability: 2 watts

High voltage rating: 100V collector-emitter breakdown voltage

High current capability: 6A collector current

High current gain: min 15 @ 3A, 4V

High transition frequency: 3MHz

Product Advantages

Robust design for reliable operation

Suitable for high-power switching and amplifier applications

Surface mount package for space-efficient PCB layout

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100V

Current Collector (Ic) (Max): 6A

Current Collector Cutoff (Max): 700A

Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A

DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V

Frequency Transition: 3MHz

Quality and Safety Features

RoHS3 compliant

Reliable DPAK package

Compatibility

Surface mount design for easy PCB integration

Application Areas

High-power switching circuits

Amplifier circuits

Industrial and consumer electronics

Product Lifecycle

Active product

Replacement and upgrade options available

Key Reasons to Choose This Product

High power and voltage handling capability

High current gain and transition frequency

Robust and reliable design

Surface mount package for space-efficient layout

Suitable for a wide range of high-power applications