Manufacturer Part Number
ZXTN25100BFHTA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 compliant
SOT-23-3 package
Operating temperature range: -55°C to 150°C
Power rating: 1.25W
Collector-Emitter breakdown voltage: 100V
Collector current (max): 3A
Collector cutoff current (max): 50nA
Collector-Emitter saturation voltage: 250mV @ 300mA, 3A
Transistor type: NPN
DC current gain (hFE): 100 min @ 10mA, 2V
Transition frequency: 160MHz
Surface mount package
Product Advantages
High voltage and current handling capability
Low saturation voltage
High switching speed
RoHS3 compliance for environmental sustainability
Key Technical Parameters
Power rating: 1.25W
Collector-Emitter breakdown voltage: 100V
Collector current (max): 3A
Collector cutoff current (max): 50nA
Collector-Emitter saturation voltage: 250mV @ 300mA, 3A
DC current gain (hFE): 100 min @ 10mA, 2V
Transition frequency: 160MHz
Quality and Safety Features
RoHS3 compliant for restricted substances
Suitable for high-reliability applications
Compatibility
Surface mount package (SOT-23-3)
Commonly used in electronic circuit designs
Application Areas
Power amplifiers
Switching circuits
Inverters
Motor drives
Industrial electronics
Product Lifecycle
Current product offering, not nearing discontinuation
Replacements and upgrades may be available as technology evolves
Key Reasons to Choose This Product
High voltage and current handling capability
Low saturation voltage for efficient power delivery
High switching speed for fast-switching applications
RoHS3 compliance for environmental considerations
Proven reliability and performance in various electronic circuits
ZXTN25040DZMSV