MMBT3904TT1G - onsemi

Manufacturer Part Number

MMBT3904TT1G

Manufacturer

onsemi

Introduction

The MMBT3904TT1G is a high-performance NPN bipolar junction transistor (BJT) suitable for a wide range of analog and digital circuit applications.

Product Features and Performance

NPN bipolar junction transistor

Collector-emitter breakdown voltage: 40V

Collector current: 200mA

Power dissipation: 300mW

Transition frequency: 300MHz

Low collector-emitter saturation voltage

High current gain (hFE) of 100 at 10mA, 1V

Product Advantages

Excellent high-frequency performance

Robust and reliable design

Suitable for surface mount applications

RoHS compliant

Key Technical Parameters

Package: SC-75, SOT-416

Operating temperature: -55°C to 150°C

Collector-emitter breakdown voltage: 40V

Collector current: 200mA

Power dissipation: 300mW

Transition frequency: 300MHz

Current gain (hFE): 100 @ 10mA, 1V

Quality and Safety Features

RoHS3 compliant

ESD protection

Compatibility

This transistor is compatible with a wide range of analog and digital circuits, including amplifiers, switches, and logic gates.

Application Areas

General-purpose analog and digital circuits

Switching and amplification applications

Portable electronics

Industrial control systems

Product Lifecycle

The MMBT3904TT1G is an active product, and onsemi continues to provide support and availability for this device. There are no immediate plans for discontinuation, and replacement options may be available if needed.

Key Reasons to Choose This Product

Excellent high-frequency performance

Robust and reliable design

RoHS compliance

Wide operating temperature range

Compatibility with a variety of analog and digital circuits

Availability and ongoing support from onsemi