2N5551TA - onsemi

Manufacturer Part Number

2N5551TA

Manufacturer

onsemi

Introduction

General-purpose NPN bipolar junction transistor

Product Features and Performance

High voltage rating up to 160V

High current capacity up to 600mA

Wide operating temperature range from -55°C to 150°C

High current gain (hFE) of at least 80 at 10mA, 5V

High transition frequency of 100MHz

Low collector-emitter saturation voltage of 200mV at 5mA, 50mA

Product Advantages

Robust and reliable performance

Versatile usage in various electronic circuits

Efficient power handling capability

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 160V

Collector Current (Max): 600mA

Collector Cutoff Current: 50nA

DC Current Gain: Minimum 80 at 10mA, 5V

Transition Frequency: 100MHz

Power Dissipation: 625mW

Quality and Safety Features

RoHS3 compliant

Durable TO-92-3 package

Compatibility

Compatible with various electronic circuits and applications

Application Areas

General-purpose amplification and switching in electronic devices

Suitable for use in power supplies, audio amplifiers, and many other circuits

Product Lifecycle

Active and widely available product

Replacements and upgrades may be available from the manufacturer or other suppliers

Key Reasons to Choose

Reliable and high-performance transistor

Wide range of operating parameters

Robust packaging and RoHS compliance

Suitable for diverse electronic applications