2N5551YBU - Fairchild Semiconductor

Manufacturer Part Number

2N5551YBU

Manufacturer

Fairchild (onsemi)

Introduction

General-purpose bipolar junction transistor (BJT) for use in a variety of analog and digital circuit applications

Product Features and Performance

High current handling capability up to 600 mA

Frequency transition up to 100 MHz

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage of 200 mV @ 5 mA, 50 mA

High DC current gain (hFE) of 180 min. @ 10 mA, 5 V

Product Advantages

Robust and reliable performance

Suitable for high-frequency and high-power applications

Versatile in various analog and digital circuit designs

Key Technical Parameters

Power rating: 625 mW

Collector-emitter breakdown voltage: 160 V

Transistor type: NPN

Quality and Safety Features

RoHS3 compliant

Packaged in industry-standard TO-92-3 and TO-226-3 (TO-226AA) packages

Compatibility

Compatible with a wide range of electronic devices and circuit applications

Application Areas

Amplifiers, switches, drivers, and other analog and digital circuits

Power supplies, motor controls, and industrial electronics

Consumer electronics and telecommunication equipment

Product Lifecycle

This product is an established and widely-used general-purpose BJT

Replacements and upgrades are readily available from Fairchild (onsemi) and other manufacturers

Several Key Reasons to Choose This Product

Reliable and robust performance

Suitable for high-frequency and high-power applications

Versatile in various analog and digital circuit designs

Readily available and supported by the manufacturer

Compliant with RoHS3 environmental regulations