Manufacturer Part Number
2N5551TA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
TO-92-3 Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage: 160 V (Max)
Collector Current: 600 mA (Max)
Collector Cutoff Current: 50 nA (Max)
Collector-Emitter Saturation Voltage: 200 mV @ 5 mA, 50 mA
DC Current Gain: 80 (Min) @ 10 mA, 5 V
Transition Frequency: 100 MHz
Product Advantages
High voltage and current capabilities
Reliable performance over wide temperature range
Suitable for various electronic circuit applications
Key Technical Parameters
NPN Transistor Type
Through Hole Mounting
Quality and Safety Features
Compliance with relevant industry standards
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Amplifiers
Switches
Drivers
Voltage regulators
General-purpose electronic circuits
Product Lifecycle
Current production model, no discontinuation plans
Several Key Reasons to Choose This Product
Robust performance in high voltage and current applications
Wide operating temperature range for reliable operation
Versatile compatibility with various electronic circuits
Cost-effective solution for common transistor applications