2N5551YBU - onsemi

Manufacturer Part Number

2N5551YBU

Manufacturer

onsemi

Introduction

General-purpose NPN bipolar junction transistor (BJT) suitable for a variety of amplifier and switching applications.

Product Features and Performance

High current handling capability up to 600 mA

Wide collector-emitter breakdown voltage up to 160 V

High frequency transistor with transition frequency up to 100 MHz

Low collector-emitter saturation voltage of 200 mV @ 5 mA, 50 mA

Wide operating temperature range from -55°C to 150°C

Product Advantages

Reliable and robust construction

Excellent thermal stability

Suitable for high-voltage and high-frequency applications

Compatible with various mounting methods

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 160 V

Collector Current (Max): 600 mA

Power Dissipation (Max): 625 mW

Current Gain (hFE) (Min): 180 @ 10 mA, 5 V

Transition Frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Suitable for through-hole mounting

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

General-purpose amplifier and switching circuits

Power supplies

Audio equipment

Industrial control systems

Product Lifecycle

This is an active and widely used product, with no known plans for discontinuation.

Replacement and upgrade options are readily available from onsemi and other semiconductor manufacturers.

Key Reasons to Choose This Product

High performance and reliability

Wide range of operating parameters

Proven track record in numerous applications

Compatibility with various mounting techniques

Availability of replacement and upgrade options