2N5551RLRPG - onsemi

Manufacturer Part Number

2N5551RLRPG

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

TO-92 (TO-226) package

Operating Temperature Range: -55°C to 150°C

Power Rating: 625 mW

Collector-Emitter Breakdown Voltage: 160 V

Collector Current (Max): 600 mA

Collector Cutoff Current (Max): 50 nA

Collector-Emitter Saturation Voltage: 200 mV @ 5 mA, 50 mA

DC Current Gain (hFE): 80 min @ 10 mA, 5 V

Transition Frequency: 300 MHz

Product Advantages

High voltage and current capability

High frequency operation

Reliable performance in a wide temperature range

Key Technical Parameters

Transistor Type: NPN

Mounting Type: Through Hole

Package: TO-226-3, TO-92-3 Long Body (Formed Leads)

Quality and Safety Features

Compliant with RoHS and other environmental regulations

Compatibility

Widely used in various electronic circuits and applications

Application Areas

Amplifiers, Switches, Drivers, and other general-purpose electronics

Product Lifecycle

This is an active and commonly used product, with no plans for discontinuation.

Replacement and upgrade options are available from onsemi and other manufacturers.

Key Reasons to Choose This Product

Proven reliability and performance in a wide range of applications

High voltage and current capabilities

High-frequency operation for advanced circuit designs

Availability of replacement and upgrade options

Compliance with environmental regulations