Manufacturer Part Number
SIRA80DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance MOSFET transistor in a compact surface-mount package
Product Features and Performance
N-Channel MOSFET
30V drain-to-source voltage
100A continuous drain current
Low on-resistance of 0.62mΩ
Fast switching speed
High power dissipation of 104W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact PowerPAK SO-8 package
Efficient heat dissipation
Robust design for high reliability
Suitable for high-current applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): +20V/-16V
On-resistance (Rds(on)): 0.62mΩ @ 20A, 10V
Drain current (Id): 100A (at 25°C)
Input capacitance (Ciss): 9530pF @ 15V
Gate charge (Qg): 188nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long lifespan
Compatibility
Compatible with various high-power electronic applications
Application Areas
Suitable for use in power supplies, motor drives, and other high-current, high-power applications
Product Lifecycle
This product is an active, in-production component from Vishay/Siliconix
Replacement or upgraded models may become available in the future as technology evolves
Several Key Reasons to Choose This Product
Excellent performance characteristics, including high current capacity, low on-resistance, and fast switching
Compact and efficient PowerPAK SO-8 package for space-constrained designs
Robust design and wide operating temperature range for reliable operation
Suitable for a variety of high-power, high-current applications
SIRB40DP-T1-GE3Vishay