SIRA80DP-T1-RE3 - Vishay Siliconix

Manufacturer Part Number

SIRA80DP-T1-RE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance MOSFET transistor in a compact surface-mount package

Product Features and Performance

N-Channel MOSFET

30V drain-to-source voltage

100A continuous drain current

Low on-resistance of 0.62mΩ

Fast switching speed

High power dissipation of 104W

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact PowerPAK SO-8 package

Efficient heat dissipation

Robust design for high reliability

Suitable for high-current applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

Gate-to-source voltage (Vgs): +20V/-16V

On-resistance (Rds(on)): 0.62mΩ @ 20A, 10V

Drain current (Id): 100A (at 25°C)

Input capacitance (Ciss): 9530pF @ 15V

Gate charge (Qg): 188nC @ 10V

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and long lifespan

Compatibility

Compatible with various high-power electronic applications

Application Areas

Suitable for use in power supplies, motor drives, and other high-current, high-power applications

Product Lifecycle

This product is an active, in-production component from Vishay/Siliconix

Replacement or upgraded models may become available in the future as technology evolves

Several Key Reasons to Choose This Product

Excellent performance characteristics, including high current capacity, low on-resistance, and fast switching

Compact and efficient PowerPAK SO-8 package for space-constrained designs

Robust design and wide operating temperature range for reliable operation

Suitable for a variety of high-power, high-current applications