Manufacturer Part Number
SIRA52DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET with low on-resistance in a PowerPAK SO-8 package.
Product Features and Performance
Ultra-low on-resistance for high efficiency
Optimized for synchronous rectification and high-frequency switching
Trench MOSFET technology for high power density and fast switching
Product Advantages
Excellent thermal performance
Low gate charge for fast switching
Rugged and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
On-resistance (Rds(on)): 1.7 mΩ @ 15 A, 10 V
Continuous Drain Current (Id): 60 A @ 25°C
Input Capacitance (Ciss): 7150 pF @ 20 V
Power Dissipation (Pd): 48 W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (PowerPAK SO-8)
Suitable for high-frequency switching applications
Application Areas
Synchronous rectification
High-frequency power conversion
Automotive and industrial applications
Product Lifecycle
This product is an active and widely available part.
Replacement and upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent efficiency and power density
Fast switching and low gate charge
Robust and reliable design
Suitable for high-power, high-frequency applications