Manufacturer Part Number
SIRA24DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET in a Power-PAK SO-8 package
Product Features and Performance
Robust TrenchFET Gen IV technology
Low on-resistance for high efficiency
High current capability up to 60A
Wide operating temperature range (-55°C to 150°C)
Low gate charge for fast switching
Product Advantages
Excellent thermal performance
Compact and efficient Power-PAK SO-8 package
Optimized for high-power, high-frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 25V
On-resistance (Rds(on)): 1.4mΩ @ 15A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 2650pF @ 10V
Power Dissipation (Pd): 62.5W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for use in high-power, high-frequency switching applications
Application Areas
Power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance
High current capability and wide temperature range
Compact and thermally efficient Power-PAK SO-8 package
Optimized for high-power, high-frequency applications
RoHS3 compliant for use in safety-critical applications