Manufacturer Part Number
SIRA18DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel 30V MOSFET with low on-resistance
Product Features and Performance
Trench MOSFET technology
Very low on-resistance of 7.5 mΩ
Continuous drain current of 33A at 25°C
Low gate charge of 21.5 nC
Wide operating temperature range of -55°C to 150°C
Fast switching speed
Product Advantages
Excellent thermal performance
Efficient power conversion
Reliable and durable
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): +20V/-16V
On-Resistance (Rds(on)): 7.5 mΩ
Continuous Drain Current (Id): 33A
Input Capacitance (Ciss): 1000 pF
Power Dissipation: 3.3W (Ta), 14.7W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (PowerPAK SO-8)
Compatible with a wide range of electronic systems
Application Areas
Power management
Motor control
DC-DC converters
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
Excellent thermal and electrical performance
Reliable and durable design
Suitable for a wide range of power management applications
Cost-effective solution for efficient power conversion
Compatibility with various electronic systems