Manufacturer Part Number
SIRA14DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a N-Channel MOSFET transistor in a PowerPAK SO-8 package.
Product Features and Performance
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Current Continuous Drain (Id) @ 25°C: 58A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Product Advantages
High current handling capability
Low on-resistance
Fast switching speed
Key Technical Parameters
MOSFET (Metal Oxide) technology
N-Channel configuration
PowerPAK SO-8 package
Tape & Reel (TR) packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount mounting
Application Areas
Power conversion and management
Motor control
Lighting and industrial applications
Product Lifecycle
Current production model
Replacement parts and upgrades may be available
Several Key Reasons to Choose This Product
High current and power handling capability
Low on-resistance for improved efficiency
Compact and thermally efficient package
Suitable for a wide range of power electronics applications
Proven reliability and performance from a reputable manufacturer