Manufacturer Part Number
SIRA12DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET MOSFET
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency applications
Suitable for power conversion, motor control, and other power management applications
Product Advantages
Excellent thermal performance
Robust design
Reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
On-resistance (Rds(on)): 4.3 mΩ @ 10 A, 10 V
Continuous Drain Current (Id): 25 A @ 25°C
Input Capacitance (Ciss): 2070 pF @ 15 V
Power Dissipation: 4.5 W @ Ta, 31 W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Designed for surface mount applications
Application Areas
Power conversion
Motor control
Power management
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance for high-power applications
Fast switching for high-frequency operation
Robust design for reliable operation
Suitable for a wide range of power management and control applications