Manufacturer Part Number
SIRA10DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a high-performance N-Channel TrenchFET MOSFET transistor.
Product Features and Performance
30V drain-to-source voltage
60A continuous drain current at 25°C
7mOhm maximum on-resistance at 10A, 10V
2425pF maximum input capacitance at 15V
5W maximum power dissipation at 25°C
40W maximum power dissipation at case temperature
Product Advantages
High efficiency due to low on-resistance
High current capability
Compact PowerPAK SO-8 surface mount package
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Gate voltage range: +20V/-16V
Threshold voltage: 2.2V at 250A
Gate charge: 51nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
This product is compatible with a variety of high-power electronic circuits and applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgraded parts may become available in the future.
Key Reasons to Choose This Product
Excellent performance characteristics, including high current capability and low on-resistance
Compact and efficient surface mount package
Suitable for a wide range of high-power applications
Proven reliability and quality from a trusted manufacturer