Manufacturer Part Number
SIRA02DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIRA02DP-T1-GE3 is a N-Channel MOSFET transistor from Vishay/Siliconix, part of the TrenchFET series.
Product Features and Performance
30V Drain-Source Voltage (Vdss)
+20V/-16V Gate-Source Voltage (Vgs)
2mOhm Maximum On-Resistance (Rds(on))
50A Continuous Drain Current (Id)
6150pF Maximum Input Capacitance (Ciss)
5W Power Dissipation (Ta), 71.4W Power Dissipation (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact PowerPAK SO-8 surface mount package
Key Technical Parameters
MOSFET technology
N-Channel FET type
2V maximum Gate-Source Threshold Voltage (Vgs(th))
5V to 10V Drive Voltage range
117nC maximum Gate Charge (Qg)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for surface mount applications
Application Areas
Power supply and conversion circuits
Motor control
Automotive electronics
Industrial automation
Product Lifecycle
Currently in production
Replacement/upgrade options available
Key Reasons to Choose
Excellent performance-to-size ratio
Robust and reliable design
Wide operating temperature range
Compatibility with common power electronics applications