Manufacturer Part Number
SIRA04DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
High current handling capacity up to 40A
Low on-resistance of 2.15mOhm
High power dissipation up to 62.5W
Wide operating temperature range from -55°C to 150°C
Product Advantages
Efficient power management
High reliability and ruggedness
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): +20V/-16V
Continuous Drain Current (Id): 40A
Input Capacitance (Ciss): 3595pF
Gate Charge (Qg): 77nC
Quality and Safety Features
RoHS3 compliant
PowerPAK SO-8 package
Compatibility
Surface mount package
Suitable for tape and reel packaging
Application Areas
Power management circuits
Motor control
Switched-mode power supplies
Automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power management
Wide operating temperature range for reliable performance in harsh environments
Trench MOSFET technology for improved efficiency and ruggedness
RoHS3 compliance for environmental responsibility
Surface mount and tape/reel packaging for easy integration into various applications