SIRA00DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIRA00DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

High current capability up to 100A continuous (at 25°C)

Low on-resistance of 1mOhm max at 10V gate-source voltage

High power dissipation up to 104W (at 25°C case temperature)

High operating temperature range of -55°C to 150°C

Low input capacitance of 11700pF max at 15V

Fast switching with low gate charge of 220nC max at 10V

Product Advantages

Efficient power conversion and control

Suitable for high power applications

Compact surface mount packaging

Key Technical Parameters

Drain-Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs): +20V/-16V

Continuous Drain Current (ID): 100A

On-Resistance (Rds(on)): 1mOhm max

Power Dissipation: 6.25W (at 25°C ambient), 104W (at 25°C case)

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable PowerPAK SO-8 surface mount package

Compatibility

Compatible with various high-power electronic circuits and systems

Application Areas

Power conversion and control

Motor drives

Switching power supplies

Industrial and consumer electronics

Product Lifecycle

Currently in active production. No information on pending discontinuation or availability of replacements/upgrades.

Key Reasons to Choose This Product

High current and power handling capability

Efficient power conversion with low on-resistance

Wide operating temperature range

Compact and reliable surface mount packaging

Suitable for a wide range of high-power applications