Manufacturer Part Number
SIR890DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
PowerPAK SO-8 Package
TrenchFET Series
N-Channel MOSFET
High current capability up to 50A
Low on-resistance down to 2.9mΩ
Wide operating temperature range of -55°C to 150°C
High input capacitance up to 2747pF
Power dissipation up to 50W
Product Advantages
Excellent thermal management
High efficiency and low losses
Compact and space-saving design
Reliable and robust performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 50A
On-Resistance (Rds(on)): 2.9mΩ
Input Capacitance (Ciss): 2747pF
Gate Charge (Qg): 60nC
Quality and Safety Features
ROHS3 Compliant
Suitable for high-temperature applications
Compatibility
Surface mount design
Compatible with various electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
High current and power handling capability
Excellent thermal management and efficiency
Compact and space-saving design
Reliable and robust performance
Wide operating temperature range
Compatibility with various applications
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