Manufacturer Part Number
SIR882DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIR882DP-T1-GE3 is a high-performance N-channel MOSFET transistor designed for use in a variety of power management and switching applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
Low On-Resistance (Rds(on)) of 8.7 mΩ @ 20A, 10V
High Current Capability of 60A Continuous Drain Current (Id) at 25°C
Fast Switching Speed and Low Gate Charge (Qg) of 58 nC @ 10V
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable and robust performance across a wide temperature range
Compact PowerPAK SO-8 surface mount package for space-saving designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.7 mΩ @ 20A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 1930 pF @ 50V
Power Dissipation: 5.4W @ 25°C (Ta), 83W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for use in a wide range of power electronics applications
Compatible with various control ICs and driver circuits
Application Areas
Power supplies
Motor drives
Switch-mode power supplies
Inverters
Battery chargers
Industrial automation
Product Lifecycle
Current production model
No plans for discontinuation at this time
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
Wide temperature range and robust design
Compact and space-saving package
Proven reliability and quality
Compatibility with a variety of applications