Manufacturer Part Number
SIR882ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET with low on-resistance in a PowerPAK SO-8 package.
Product Features and Performance
Ultra-low on-resistance down to 8.7 mΩ
High current capability up to 60 A
Low gate charge for fast switching
Wide operating temperature range of -55°C to 150°C
Robust and reliable design
Product Advantages
Excellent power density and efficiency
Efficient heat dissipation in the PowerPAK SO-8 package
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 8.7 mΩ @ 20 A, 10 V
Continuous Drain Current (Id): 60 A @ 25°C
Input Capacitance (Ciss): 1975 pF @ 50 V
Power Dissipation (Max): 5.4 W (Ta), 83 W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial and automotive applications
Compatibility
Compatible with various power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Automotive electronics
Product Lifecycle
Currently in production, with no plans for discontinuation. Replacements and upgrades available from Vishay.
Key Reasons to Choose This Product
Ultra-low on-resistance for high efficiency
High current capability for demanding applications
Fast switching and low gate charge for improved power density
Wide operating temperature range for versatile use
Robust and reliable design for industrial and automotive applications
Efficient heat dissipation in the PowerPAK SO-8 package