Manufacturer Part Number
SIR880DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Vishay's SIR880DP-T1-GE3 is a high-performance N-Channel TrenchFET MOSFET designed for use in a wide range of power conversion and control applications.
Product Features and Performance
80V drain-to-source voltage rating
9mΩ maximum on-resistance at 20A, 10V
60A continuous drain current at 25°C
Low gate charge of 74nC at 10V
Low input capacitance of 2440pF at 40V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High efficiency and low power loss
Compact and space-saving PowerPAK SO-8 package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.9mΩ @ 20A, 10V
Drain Current (Id): 60A @ 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of power conversion and control applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Automotive electronics
Industrial power electronics
Consumer electronics
Telecommunications equipment
Product Lifecycle
The SIR880DP-T1-GE3 is an actively supported product, and Vishay continues to manufacture and distribute this model.
Replacement or upgrade options may be available, but you should consult with Vishay for the most up-to-date information.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and space-saving package
Wide operating temperature range
RoHS3 compliance and AEC-Q101 qualification
Suitable for a variety of power conversion and control applications