Manufacturer Part Number
SIR878ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET in a compact PowerPAK SO-8 package.
Product Features and Performance
Trench MOSFET technology for low on-resistance and high current capability
High voltage rating up to 100V
Low on-resistance of 14mOhm at 15A, 10V
High continuous drain current of 40A at 25°C
Wide operating temperature range of -55°C to 150°C
Product Advantages
Compact and efficient PowerPAK SO-8 package
High power density and low thermal resistance
Ideal for high-current, high-frequency power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 14mOhm at 15A, 10V
Continuous Drain Current (Id): 40A at 25°C
Input Capacitance (Ciss): 1275pF at 50V
Power Dissipation: 5W at Ta, 44.5W at Tc
Quality and Safety Features
RoHS3 compliant
Trench MOSFET technology for reliable performance
Compatibility
Compatible with various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power amplifiers
Industrial and automotive electronics
Product Lifecycle
Current production product
Replacements and upgrades available
Key Reasons to Choose This Product
High power density and efficiency
Compact PowerPAK SO-8 package
Wide operating temperature range
Low on-resistance for high current handling
Reliable Trench MOSFET technology
SIR880DP-T1-GE3 MOSElectro-Films (EFI) / Vishay