Manufacturer Part Number
SIR873DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET in PowerPAK SO-8 package
Product Features and Performance
Operates at high temperatures up to 150°C
Low on-resistance of 47.5 mΩ at 10 A, 10 V
High current handling capacity of 37 A at 25°C
Fast switching speed with low input capacitance of 1805 pF
Wide operating voltage range up to 150 V
Product Advantages
Efficient power conversion with low conduction and switching losses
Compact and thermally efficient PowerPAK SO-8 package
Suitable for high-power and high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 47.5 mΩ @ 10 A, 10 V
Continuous Drain Current (Id): 37 A at 25°C
Input Capacitance (Ciss): 1805 pF @ 75 V
Power Dissipation (Ptot): 104 W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature and high-power applications
Compatibility
Compatible with various power electronics and motor control applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and automotive electronics
Product Lifecycle
This product is a current offering from Vishay/Siliconix and is not nearing discontinuation.
Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance and fast switching
Compact and thermally efficient PowerPAK SO-8 package
Wide operating voltage and temperature range
Suitable for high-power and high-frequency applications
Reliable and RoHS3 compliant
SIR872DPElectro-Films (EFI) / Vishay