SIR873DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR873DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel enhancement-mode power MOSFET in PowerPAK SO-8 package

Product Features and Performance

Operates at high temperatures up to 150°C

Low on-resistance of 47.5 mΩ at 10 A, 10 V

High current handling capacity of 37 A at 25°C

Fast switching speed with low input capacitance of 1805 pF

Wide operating voltage range up to 150 V

Product Advantages

Efficient power conversion with low conduction and switching losses

Compact and thermally efficient PowerPAK SO-8 package

Suitable for high-power and high-frequency applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 150 V

Gate-to-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 47.5 mΩ @ 10 A, 10 V

Continuous Drain Current (Id): 37 A at 25°C

Input Capacitance (Ciss): 1805 pF @ 75 V

Power Dissipation (Ptot): 104 W at 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature and high-power applications

Compatibility

Compatible with various power electronics and motor control applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Industrial and automotive electronics

Product Lifecycle

This product is a current offering from Vishay/Siliconix and is not nearing discontinuation.

Replacement or upgrade options may be available in the future as technology advances.

Key Reasons to Choose This Product

Excellent performance and efficiency with low on-resistance and fast switching

Compact and thermally efficient PowerPAK SO-8 package

Wide operating voltage and temperature range

Suitable for high-power and high-frequency applications

Reliable and RoHS3 compliant