SIR872DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR872DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-Channel enhancement-mode power MOSFET

Designed for high-frequency, high-power switching applications

Product Features and Performance

150V drain-to-source voltage

Very low on-resistance of 18mΩ @ 20A, 10V

High current capability of 53.7A continuous drain current at 25°C

Fast switching speed

Low gate charge of 64nC @ 10V

Robust design with high ruggedness and reliability

Product Advantages

Excellent performance-to-cost ratio

Suitable for high-frequency, high-power switching applications

Compact and efficient power management solutions

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 150V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 18mΩ @ 20A, 10V

Continuous Drain Current (Id): 53.7A @ 25°C

Input Capacitance (Ciss): 2130pF @ 75V

Power Dissipation: 6.25W (Ta), 104W (Tc)

Quality and Safety Features

RoHS3 compliant

Highly reliable and robust design

Excellent thermal management

Compatibility

Suitable for a wide range of high-frequency, high-power switching applications

Compatible with various electronic systems and power supplies

Application Areas

Switch-mode power supplies

Motor drives

Industrial and automotive electronics

Lighting and heating control systems

Product Lifecycle

Currently in active production

No known discontinuation or replacement plans

Key Reasons to Choose This Product

Exceptional performance-to-cost ratio

High current capability and low on-resistance for efficient power handling

Fast switching speed and low gate charge for high-frequency operation

Robust and reliable design for demanding applications

Compact and efficient power management solutions

RoHS3 compliance for environmental friendliness