Manufacturer Part Number
SIR866DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Trench Technology
High power density
Low on-resistance
Fast switching speed
High current capability
Product Advantages
Efficient power conversion
Compact design
Reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.9mΩ @ 20A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 4730pF @ 10V
Power Dissipation: 5.4W (Ta), 83W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package: PowerPAK SO-8
Suitable for various power electronics applications
Application Areas
Power supplies
Motor drives
Electric vehicles
Renewable energy systems
Industrial automation
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High power density and efficiency
Low on-resistance for reduced power losses
Fast switching capability for improved system performance
Reliable and rugged design for demanding applications
Compact surface mount package for space-constrained designs