Manufacturer Part Number
SIR862DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET® power MOSFET in PowerPAK SO-8 package
Product Features and Performance
Low on-resistance of 2.8 mΩ @ 15 A, 10 V
Continuous drain current of 50 A at 25°C case temperature
Fast switching with gate charge of 90 nC @ 10 V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3800 pF @ 10 V
Product Advantages
Excellent thermal and electrical performance
Compact and efficient PowerPAK SO-8 package
Suitable for high-current, high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.3 V @ 250 A
On-Resistance (Rds(on)): 2.8 mΩ @ 15 A, 10 V
Continuous Drain Current (Id): 50 A @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Compatible with standard PowerPAK SO-8 footprint
Application Areas
Suitable for high-current, high-frequency switching applications
Ideal for DC/DC converters, motor drives, power supplies, and other power management systems
Product Lifecycle
Current production, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent thermal and electrical performance
Compact and efficient PowerPAK SO-8 package
Wide operating temperature range and high reliability
Suitable for a variety of high-power, high-frequency switching applications
Proven TrenchFET technology from a trusted manufacturer